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APTC80H29T1G
Full - Bridge Super Junction MOSFET Power Module
3 Q1 5 Q2 7 4 Q3 2 Q4 9
VDSS = 800V RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
6
1
8 11 NTC
10
*
12
* *
Pins 3/4 must be shorted together
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 800 15 11 60 30 290 156 17 0.5 670 Unit V A V m W A mJ
August, 2007 1-6 APTC80H29T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC80H29T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V
3
Max 25 250 290 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 15A Inductive switching @125C VGS = 15V VBus = 533V ID = 15A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 15A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 15A, RG = 5 Min Typ 2254 1046 54 90 11 45 10 13 83 35 243 139 425 171 J J nC Max Unit pF
ns
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 15A IS = - 15A VR = 400V diS/dt = 100A/s Tj = 25C Tj = 25C 550 15 Min Typ 15 11 Max Unit A 1.2 6 V V/ns ns C
August, 2007 2-6 APTC80H29T1G - Rev 0
dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 100A/s VR VDSS Tj 150C IS - 15A
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APTC80H29T1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.80 150 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-6
APTC80H29T1G - Rev 0
August, 2007
APTC80H29T1G
Typical performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 40 35 ID, Drain Current (A) 30 25 20 15 10 5 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 5 10 15 20 25 30 ID, Drain Current (A)
VGS=20V VGS=10V
Transfert Characteristics 50
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6V 5.5V 5V 4.5V 4V
ID, Drain Current (A)
6.5V
40 30 20 10 0 0
TJ=125C TJ=25C TJ=125C
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 16 ID, DC Drain Current (A) 14 12 10 8 6 4 2 0 25 50 75 100 125 150
August, 2007 4-6 APTC80H29T1G - Rev 0
Normalized to VGS=10V @ 7.5A
TC, Case Temperature (C)
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APTC80H29T1G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.0 0.9 0.8 0.7 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 10000 Ciss C, Capacitance (pF) 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100
limited by RDSon 100s
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 7.5A
10
1ms
1
Single pulse TJ=150C TC=25C 1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100
August, 2007
VDS=640V ID=15A TJ=25C VDS=160V VDS=400V
Gate Charge (nC)
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5-6
APTC80H29T1G - Rev 0
APTC80H29T1G
Delay Times vs Current Rise and Fall times vs Current 50
td(off)
100
td(on) and td(off) (ns)
80
tr and tf (ns)
40
VDS=533V RG=5 TJ=125C L=100H
tf
60 40 20 0 5
30 20 10 0
VDS=533V RG=5 TJ=125C L=100H
tr
td(on)
10 15 20 ID, Drain Current (A)
Switching Energy vs Current
25
5
10 15 20 ID, Drain Current (A)
25
Switching Energy vs Gate Resistance 1250 Switching Energy (J)
VDS=533V ID=15A TJ=125C L=100H
800 700 Eon and Eoff (J) 600 500 400 300 200 100 0 5
VDS=533V RG=5 TJ=125C L=100H
Eon
1000 750 500 250 0
Eoff
Eon
Eoff
Eoff
10 15 20 ID, Drain Current (A)
25
0
10 20 30 40 Gate Resistance (Ohms)
50
Operating Frequency vs Drain Current 400 350 Frequency (kHz) 300 250 200 150 100 50 0 4 6 8 10 12 ID, Drain Current (A) 14
Hard switching ZCS ZVS VDS=533V D=50% RG=5 TJ=125C TC=75C
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage 1000
100 TJ=150C 10 TJ=25C 1 0.2 0.6 1 1.4 1.8
August, 2007 APTC80H29T1G - Rev 0
VSD, Source to Drain Voltage (V)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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